? semiconductor components industries, llc, 2006 august, 2006 ? rev. 3 1 publication order number: NTQD4154Z/d NTQD4154Z power mosfet 20 v, 7.5 a, common ? drain, dual n ? channel tssop ? 8 features ? common drain for ease of circuit connection ? low r ds(on) extending battery life ? esd protected gate ? pb ? free package is available applications ? li ? ion battery protection circuit ? power management in portable and battery ? powered products maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value units drain ? to ? source voltage v dss 20 v gate ? to ? source voltage v gs 12 v continuous drain current (note 1) steady state t a = 25 c i d 7.5 a t a = 75 c 5.8 power dissipation (note 1) t a = 25 c p d 1.52 w continuous drain current (note 2) t 10 s t a = 25 c i d 9.8 a t a = 75 c 7.6 power dissipation (note 2) t 10 s t a = 25 c p d 2.6 w pulsed drain current tp = 10 s i dm 30 a operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s 2.2 a lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c thermal resistance ratings parameter symbol max units junction ? to ? ambient ? steady state r ja 82 c/w junction ? to ? ambient ? t 10 s r ja 48 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. mounted onto a 2 square fr ? 4 board (1 in sq, 2 oz. cu. 0.06 thick single ? sided), steady state. 2. mounted onto a 2 square fr ? 4 board (1 in sq, 2 oz. cu. 0.06 thick single ? sided), t 10 s. device package shipping ? ordering information NTQD4154Zr2 tssop ? 8 n ? channel d s1 g1 NTQD4154Zr2g tssop ? 8 (pb ? free) n ? channel d s2 g2 http://onsemi.com ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. 20 v 15 m @ 4.5 v r ds(on) typ 7.5 a i d max v (br)dss 21 m @ 2.5 v 250 250 tssop ? 8 case 948s plastic 1 marking diagram & pin assignment 8 54z = specific device code a = assembly location y = year ww = work week = pb ? free package s1 54z yww a g1 s2 g2 dddd 1 4000 / tape & reel 4000 / tape & reel
NTQD4154Z http://onsemi.com 2 electrical characteristics (t j =25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 20 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 12 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 16 v t j = 25 c 1.0 a t j = 125 c 25 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 4.5 v 1.0 a on characteristics (note 3) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 0.6 1.5 v negative threshold temperature coefficient v gs(th) /t j 4.1 mv/ c drain ? to ? source on resistance r ds(on) v gs = 4.5 v, i d = 7.5 a 15 19 m v gs = 2.5 v, i d = 5.5 a 21 26 forward transconductance g fs v gs = 10 v, i d = 7.5 a 46 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = 16 v 1485 pf output capacitance c oss 220 reverse transfer capacitance c rss 175 total gate charge q g(tot) v gs = 4.5 v, v ds = 10 v, i d = 7.5 a 21.5 nc threshold gate charge q g(th) 4.0 gate ? to ? source charge q gs 6.0 gate ? to ? drain charge q gd 5.5 switching characteristics (note 4) turn ? on delay time t d(on) v gs = 4.5 v, v dd = 10 v, i d = 7.5 a, r g = 6.0 0.2 s rise time t r 0.5 turn ? off delay time t d(off) 1.12 fall time t f 0.86 drain ? source diode characteristics (note 3) forward diode voltage v sd v gs = 0 v, i s = 6.5 a t j = 25 c 0.8 1.2 v reverse recovery time t rr v gs = 0 v, di sd /dt = 100 a/ s i s = 6.5 a 1.02 s t a 0.32 t b 0.7 q rr 11.6 c 3. pulse test: pulse width 300 s, duty cycle 2%. 4. switching characteristics are independent of operating junction temperatures.
NTQD4154Z http://onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) 3 v 125 c 0 30 24 3 2 v ds , drain ? to ? source voltage (volts) i d, drain current (amps) 6 0 1 figure 1. on ? region characteristics 0 30 1.5 12 24 0.5 0 figure 2. transfer characteristics v gs , gate ? to ? source voltage (volts) 16 1000 100 figure 3. on ? resistance vs. gate ? to ? source voltage v ds , drain ? to ? source voltage (volts) i dss, leakage current (na) i d, drain current (amps) 2.5 10 0.01 figure 4. on ? resistance vs. drain current and gate voltage v gs, gate ? to ? source voltage (volts) ? 50 0 ? 25 25 1.0 0.5 0 50 125 100 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) t j = 25 c 100000 4 t j = ? 55 c v gs = 0 v 0.0225 75 150 t j = 25 c i d = 7.5 a v gs = 4.5 v r ds(on), drain ? to ? source resistance (normalized) 25 c r ds(on), drain ? to ? source resistance ( ) 2.0 i d = 7.5 a 020 1.6 v 1.8 v 0.0175 0.015 45 10000 3.75 6.25 7.5 0.0125 v gs = 10, 5 & 4 v figure 6. drain ? to ? source leakage current vs. voltage 0 0.02 i d, drain current (amps) 0.05 0 r ds(on), drain ? to ? source resistance ( ) v gs = 4.5 v 0.01 0.04 v gs = 2.5 v 18 30 0.03 12 12 6 24 12 t j = 25 c 1.5 t j = 125 c t j = 150 c 2.5 3 6 12 18 v ds 10 v 18 2 v 0.02 5 8.75 6
NTQD4154Z http://onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) v gs = 0 v 0 2.5 10 2500 1500 1000 500 0 20 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) 0 4 1 0 q g , total gate charge (nc) v gs, gate ? to ? source voltage (volts) t j = 25 c c oss c iss c rss i d = 7.5 a t j = 25 c 15 10 2 3 q2 q1 10 1 100 10 100 r g , gate resistance (ohms) t, time (ns) v dd = 10 v i d = 7.5 a v gs = 4.5 v 5 5 t d(off) t d(on) t f t r 15 5 0.6 0 v sd , source ? to ? drain voltage (volts) i s , source current (amps) v gs = 0 v t j = 25 c 1 0 5 7.5 figure 7. capacitance variation figure 8. gate ? to ? source voltage vs. total gate charge figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current 7.5 2000 25 20 qt 10000 0.2 2.5 0.4 12.5 17.5 1000 v ds , drain ? to ? source voltage (volts) i d , drain current (amps) figure 11. maximum rated forward biased safe operating area 0.1 10 100 1 v gs = 12 v single pulse r ds(on) limit 10 ms 1 ms 100 s dc thermal limit package limit t c = 25 c 100 10 1 0.1 0.01 0.8
NTQD4154Z http://onsemi.com 5 package dimensions tssop ? 8 case 948s ? 01 issue a dim min max min max inches millimeters a 2.90 3.10 0.114 0.122 b 4.30 4.50 0.169 0.177 c ??? 1.10 ??? 0.043 d 0.05 0.15 0.002 0.006 f 0.50 0.70 0.020 0.028 g 0.65 bsc 0.026 bsc l 6.40 bsc 0.252 bsc m 0 8 0 8 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 3. dimension a does not include mold flash. protrusions or gate burrs. mold flash or gate burrs shall not exceed 0.15 (0.006) per side. 4. dimension b does not include interlead flash or protrusion. interlead flash or protrusion shall not exceed 0.25 (0.010) per side. 5. terminal numbers are shown for reference only. 6. dimension a and b are to be determined at datum plane ?w?. seating plane pin 1 1 4 85 detail e b c d a g l 2x l/2 ? u ? s u 0.20 (0.008) t s u m 0.10 (0.004) v s t 0.076 (0.003) ? t ? ? v ? ? w ? 8x ref k ident k 0.19 0.30 0.007 0.012 s u 0.20 (0.008) t p1 p detail e f m 0.25 (0.010) ???? ???? k1 k jj1 section n ? n j 0.09 0.20 0.004 0.008 k1 0.19 0.25 0.007 0.010 j1 0.09 0.16 0.004 0.006 p ??? 2.20 ??? 0.087 p1 ??? 3.20 ??? 0.126 n n mm inches 0.038 0.95 0.252 6.4 0.018 0.45 0.026 0.65 0.177 4.5 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint*
NTQD4154Z http://onsemi.com 6 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 NTQD4154Z/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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